Polaritons in semiconductor microcavities : effect of Bragg confinement

Polaritons in semiconductor microcavities : effect of Bragg confinement

We propose a semiconductor microcavity structure in which the cavity layer is entirely both optically and electronically active. Optical spectra at normal incidence are studied theoretically, showing the drastic effects of the cavity polariton mode splitting and of the Bragg mirror confinement.

Twin polaritons in semiconductor microcavities

Stimulated spin dynamics of polaritons in semiconductor microcavities

P. G. Lagoudakis, P. G. Savvidis, J. J. Baumberg, D. M. Whittaker, P. R. Eastham, M. S. Skolnick, and J. S. Roberts Department of Physics & Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom Department of Physics, University of Sheffield, Sheffield S3 7RH, United Kingdom Department of Electr...

Off-branch polaritons and multiple scattering in semiconductor microcavities

P. G. Savvidis, C. Ciuti, J. J. Baumberg,* D. M. Whittaker, M. S. Skolnick, and J. S. Roberts Department of Physics & Astronomy, University of Southampton, SO17 1BJ, United Kingdom Physics Department, Swiss Federal Institute of Technology Lausanne, CH-1015 Lausanne-EPFL, Switzerland Toshiba Research Europe Ltd, Cambridge, CB4 4WE, United Kingdom Department of Physics, University of Sheffield, S...

Microcavities in Semiconductor Materials

Positron beam and helium desorption techniques have been applied to different materials, in particular semiconductor materials, to determine the presence of defects. The positron technique yields values of the positron diffusion length and values of the Doppler broadening parameters. In principle, defect concentrations can be derived and an indication can be obtained about the nature of the def...